Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates

Bahman Hekmatshoar, Davood Shahrjerdi, Devendra K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report novel high-efficiency heterojunction (HJ) solar cells with Engineered Low-bandgap Interlayer and Thin Epitaxial emitter (ELITE) structure, achieving a record conversion efficiency of 20.7% on p-type crystalline Si (c-Si) substrates. Cell fabrication is based on plasma-enhanced chemical vapor deposition (PECVD) of contact layers at temperatures below 200°C and room-temperature sputtering of low-cost Al-doped zinc-oxide (ZnO:Al) electrodes.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages36.6.1-36.6.4
DOIs
StatePublished - 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hekmatshoar, B., Shahrjerdi, D., & Sadana, D. K. (2011). Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 36.6.1-36.6.4). [6131687] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131687