Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates

Bahman Hekmatshoar; Davood Shahrjerdi; Devendra K. Sadana

doi:10.1109/IEDM.2011.6131687

Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates

Bahman Hekmatshoar, Davood Shahrjerdi, Devendra K. Sadana

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report novel high-efficiency heterojunction (HJ) solar cells with Engineered Low-bandgap Interlayer and Thin Epitaxial emitter (ELITE) structure, achieving a record conversion efficiency of 20.7% on p-type crystalline Si (c-Si) substrates. Cell fabrication is based on plasma-enhanced chemical vapor deposition (PECVD) of contact layers at temperatures below 200°C and room-temperature sputtering of low-cost Al-doped zinc-oxide (ZnO:Al) electrodes.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	36.6.1-36.6.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131687
State	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131687

Cite this

Hekmatshoar, B., Shahrjerdi, D., & Sadana, D. K. (2011). Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 36.6.1-36.6.4). Article 6131687 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131687

Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates. / Hekmatshoar, Bahman; Shahrjerdi, Davood; Sadana, Devendra K.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 36.6.1-36.6.4 6131687 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hekmatshoar, B, Shahrjerdi, D & Sadana, DK 2011, Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates. in 2011 International Electron Devices Meeting, IEDM 2011., 6131687, Technical Digest - International Electron Devices Meeting, IEDM, pp. 36.6.1-36.6.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131687

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abstract = "We report novel high-efficiency heterojunction (HJ) solar cells with Engineered Low-bandgap Interlayer and Thin Epitaxial emitter (ELITE) structure, achieving a record conversion efficiency of 20.7% on p-type crystalline Si (c-Si) substrates. Cell fabrication is based on plasma-enhanced chemical vapor deposition (PECVD) of contact layers at temperatures below 200°C and room-temperature sputtering of low-cost Al-doped zinc-oxide (ZnO:Al) electrodes.",

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AB - We report novel high-efficiency heterojunction (HJ) solar cells with Engineered Low-bandgap Interlayer and Thin Epitaxial emitter (ELITE) structure, achieving a record conversion efficiency of 20.7% on p-type crystalline Si (c-Si) substrates. Cell fabrication is based on plasma-enhanced chemical vapor deposition (PECVD) of contact layers at temperatures below 200°C and room-temperature sputtering of low-cost Al-doped zinc-oxide (ZnO:Al) electrodes.

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Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates

Abstract

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