Abstract
A novel diol based metalorganic route has been developed and employed to deposit BaTiO3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x-ray photoelectron spectroscopy, and x-ray diffraction collectively indicated that BaTiO3 was formed through the reaction of Ba and Ti oxides at approximately 500°C. The films were single phase, had no crystallographic texture, and contained no detectable impurities.
Original language | English (US) |
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Pages (from-to) | 2804 |
Number of pages | 1 |
Journal | Applied Physics Letters |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)