Abstract
A novel polyol based metalorganic route has been developed and employed to deposit PZT thin films on Pt/Ti/SiO2/Si substrates by sol-gel processing. Differential thermal analysis (DTA), thermogravimetric analysis (TGA). Fourier transform infrared (FTIR), and X-ray diffraction collectively indicated PZT with perovskite phase structure was formed at approximately 550°C which is approximate 100°C lower than that in metal-alkoxide routes. The films are crackfree and have single perovskite phase structure with columnar crystals perpendicular to the substrate plane. The pyrolysis effect on microstructure and ferroelectric properties of the film was investigated. PZT film, which was pyrolyzed at 450°C and then annealed at 550°C for 1 h, has the coercive field of 60 kV/cm, the remnant polarization of 14 μC/cm2, the spontaneous polarization of 47.5 μC/cm2 and the switching voltage of 6 V.
Original language | English (US) |
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Pages (from-to) | 240-245 |
Number of pages | 6 |
Journal | Materials Letters |
Volume | 40 |
Issue number | 5 |
DOIs | |
State | Published - Sep 1999 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering