Observation of normal-metal phonons with proximity-effect tunneling

P. M. Chaikin, P. K. Hansma

Research output: Contribution to journalArticle

Abstract

We have measured the tunneling characteristics (dVdI and d2VdI2 versus V) of thin film junctions of the form Al-I-M-Pb, where M is Ag, Cu, or Al. These tunneling characteristics have dips at voltages corresponding to peaks in the phonon density of states of M and peaks at voltages corresponding to the peaks in the phonon density of states of Pb. From the amplitude of the dips due to the phonons of M we can crudely estimate the electron-phonon coupling constant M for Al and Cu.

Original languageEnglish (US)
Pages (from-to)1552-1555
Number of pages4
JournalPhysical Review Letters
Volume36
Issue number26
DOIs
StatePublished - Jan 1 1976
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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