On physical limits and challenges of interconnects for spin devices

Shaloo Rakheja; Azad Naeemi

doi:10.1109/NANO.2011.6144321

On physical limits and challenges of interconnects for spin devices

Shaloo Rakheja, Azad Naeemi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, compact models of performance and energy dissipation of non-local spin torque devices as interconnects in an all-spin logic are obtained. Metallic interconnects such as Cu, Al, and single-layer graphene nanoribbons (GNR) may be used as conduits of spin information in spin-based circuits. Impact of size effects on the transport parameters and consequently on the circuit performance and energy dissipation of spin interconnects are exhaustively quantified. Spin interconnects are compacted against their CMOS counterparts at the 11.9nm technology node. Important insights into the physical limits and challenges of interconnects for future spin devices are identified to better guide the research in spintronics.

Original language	English (US)
Title of host publication	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages	1389-1394
Number of pages	6
DOIs	https://doi.org/10.1109/NANO.2011.6144321
State	Published - 2011
Event	2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States Duration: Aug 15 2011 → Aug 19 2011

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Country/Territory	United States
City	Portland, OR
Period	8/15/11 → 8/19/11

Keywords

Graphene
Interconnects
Non-Local Spin-Torque Device
Spintronics

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2011.6144321

Cite this

Rakheja, S & Naeemi, A 2011, On physical limits and challenges of interconnects for spin devices. in 2011 11th IEEE International Conference on Nanotechnology, NANO 2011., 6144321, Proceedings of the IEEE Conference on Nanotechnology, pp. 1389-1394, 2011 11th IEEE International Conference on Nanotechnology, NANO 2011, Portland, OR, United States, 8/15/11. https://doi.org/10.1109/NANO.2011.6144321

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title = "On physical limits and challenges of interconnects for spin devices",

abstract = "In this paper, compact models of performance and energy dissipation of non-local spin torque devices as interconnects in an all-spin logic are obtained. Metallic interconnects such as Cu, Al, and single-layer graphene nanoribbons (GNR) may be used as conduits of spin information in spin-based circuits. Impact of size effects on the transport parameters and consequently on the circuit performance and energy dissipation of spin interconnects are exhaustively quantified. Spin interconnects are compacted against their CMOS counterparts at the 11.9nm technology node. Important insights into the physical limits and challenges of interconnects for future spin devices are identified to better guide the research in spintronics.",

keywords = "Graphene, Interconnects, Non-Local Spin-Torque Device, Spintronics",

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language = "English (US)",

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series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "1389--1394",

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AU - Naeemi, Azad

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AB - In this paper, compact models of performance and energy dissipation of non-local spin torque devices as interconnects in an all-spin logic are obtained. Metallic interconnects such as Cu, Al, and single-layer graphene nanoribbons (GNR) may be used as conduits of spin information in spin-based circuits. Impact of size effects on the transport parameters and consequently on the circuit performance and energy dissipation of spin interconnects are exhaustively quantified. Spin interconnects are compacted against their CMOS counterparts at the 11.9nm technology node. Important insights into the physical limits and challenges of interconnects for future spin devices are identified to better guide the research in spintronics.

KW - Graphene

KW - Interconnects

KW - Non-Local Spin-Torque Device

KW - Spintronics

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T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 1389

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BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011

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Y2 - 15 August 2011 through 19 August 2011

ER -

On physical limits and challenges of interconnects for spin devices

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

Access to Document

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