Abstract
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH3 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.
Original language | English (US) |
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Pages (from-to) | 154-160 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 383 |
Issue number | 1-2 |
DOIs | |
State | Published - Feb 15 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry