On the growth mechanism of a-Si:H

W. M.M. Kessels; A. H.M. Smets; D. C. Marra; E. S. Aydil; D. C. Schram; M. C.M. Van De Sanden

doi:10.1016/S0040-6090(00)01594-7

On the growth mechanism of a-Si:H

W. M.M. Kessels, A. H.M. Smets, D. C. Marra, E. S. Aydil, D. C. Schram, M. C.M. Van De Sanden

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH₃ radicals in SiH₄ plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.

Original language	English (US)
Pages (from-to)	154-160
Number of pages	7
Journal	Thin Solid Films
Volume	383
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01594-7
State	Published - Feb 15 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)01594-7

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@article{defebf9e11a5454b985d936453f1b277,

title = "On the growth mechanism of a-Si:H",

abstract = "The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH3 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.",

author = "Kessels, {W. M.M.} and Smets, {A. H.M.} and Marra, {D. C.} and Aydil, {E. S.} and Schram, {D. C.} and {Van De Sanden}, {M. C.M.}",

note = "Funding Information: Fruitful discussions with S. Ramalingam, D. Maroudas, A. von Keudell, and J.R. Robertson are acknowledged. C. Smit, B.A. Korevaar, M.G.H. Boogaarts, and J.P.M. Hoefnagels are thanked for their contributions to the measurements. This work was supported by NWO, FOM, and NOVEM. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2001",

month = feb,

day = "15",

doi = "10.1016/S0040-6090(00)01594-7",

language = "English (US)",

volume = "383",

pages = "154--160",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - On the growth mechanism of a-Si:H

AU - Kessels, W. M.M.

AU - Smets, A. H.M.

AU - Marra, D. C.

AU - Aydil, E. S.

AU - Schram, D. C.

AU - Van De Sanden, M. C.M.

N1 - Funding Information: Fruitful discussions with S. Ramalingam, D. Maroudas, A. von Keudell, and J.R. Robertson are acknowledged. C. Smit, B.A. Korevaar, M.G.H. Boogaarts, and J.P.M. Hoefnagels are thanked for their contributions to the measurements. This work was supported by NWO, FOM, and NOVEM. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH3 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.

AB - The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH3 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.

UR - http://www.scopus.com/inward/record.url?scp=0035246796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035246796&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01594-7

DO - 10.1016/S0040-6090(00)01594-7

M3 - Article

AN - SCOPUS:0035246796

SN - 0040-6090

VL - 383

SP - 154

EP - 160

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

On the growth mechanism of a-Si:H

Abstract

ASJC Scopus subject areas

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