On the growth mechanism of a-Si:H

W. M.M. Kessels, A. H.M. Smets, D. C. Marra, E. S. Aydil, D. C. Schram, M. C.M. Van De Sanden

Research output: Contribution to journalArticlepeer-review

Abstract

The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH3 radicals in SiH4 plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growth.

Original languageEnglish (US)
Pages (from-to)154-160
Number of pages7
JournalThin Solid Films
Volume383
Issue number1-2
DOIs
StatePublished - Feb 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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