On the interpretation of tunnelling into an amorphous semiconductor

E. L. Wolf

Research output: Contribution to journalArticlepeer-review

Abstract

Several recent measurements of the tunnel conductance G(V) in metal-insulator-amorphous semiconductor film junctions have shown, at V = 0, the G(0) ∝ exp (-BT- 1 4) temperature dependence characteristic of the variable-range phonon-assisted tunnelling model of Mott. It is suggested, however, that observation of this temperature dependence for a bias V{right double angle bracket}kT e indicates failure to achieve tunnel injection and internal equilibrium in the amorphous film. At equilibrium in the low temperature case, effective electron-phonon coupling can lead to the proportionality G(V)∝ ∫ 0 eV ρ{variant}(E)dE where ρ{variant}(E) is the energy density of states, rather than to G(V) ∝ ρ{variant}(eV) as is commonly assumed.

Original languageEnglish (US)
Pages (from-to)213-217
Number of pages5
JournalThin Solid Films
Volume28
Issue number2
DOIs
StatePublished - Aug 1975

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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