Optical effects based on intersub-band-transitions in quantum wells

A. S. Camacho B, J. Bohórquez, R. M. Gutiérrez, J. L. Carrillo

Research output: Contribution to journalArticlepeer-review


Unipolar devices based on intersub-band-transition have been developed in the last decade [Appl. Phys. Lett. 65 (1994) 2901]. However, this technique will not be directed applicable for the longer wavelengths corresponding to Tetrahertz frequencies. In this work we analyze a THz device based on the intersub-band-transitions of an asymmetric double quantum well. We first study the intersub-band optical absorption in superlattice made of asymmetric double quantum wells tailored as a three level system. By applying an external electric field we obtain the Wannier-Stark ladder and can tune the transition energies between the sub-bands to reach the THz absorption between the two excited sub-bands. Although the dipole moments are big, the relative THz absorption to the other frequencies is small. However, reported lifetimes for this system encourage the possibility of getting population inversion, which is the main condition to design a laser. With this goal, it is presented a detailed study of the geometric design of the asymmetric double quantum well by performing an accurate calculation of the energies and wave functions, the dipole moments and the electron-LO-phonon interaction form factors, which are important ingredients of the scattering rates results. Furthermore, we analyze the role of electron-LO-phonon scattering in THz devices.

Original languageEnglish (US)
Pages (from-to)27-31
Number of pages5
JournalMicroelectronics Journal
Issue number1
StatePublished - Jan 2004


  • Absorption
  • Electron-LO-phonon scattering rates
  • Laser design
  • Quantum wells
  • Ultrafast light pulses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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