TY - GEN
T1 - Optimization of chemical vapor deposition process
AU - George, Pradeep
AU - Hae, Chang Gea
AU - Jaluria, Yogesh
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.
AB - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.
UR - http://www.scopus.com/inward/record.url?scp=33751311077&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33751311077&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33751311077
SN - 079183784X
SN - 9780791837849
T3 - Proceedings of the ASME Design Engineering Technical Conference
BT - Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
T2 - 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
Y2 - 10 September 2006 through 13 September 2006
ER -