Optimization of chemical vapor deposition process

Pradeep George, Chang Gea Hae, Yogesh Jaluria

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Original languageEnglish (US)
Title of host publicationProceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
StatePublished - 2006
Event2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 - Philadelphia, PA, United States
Duration: Sep 10 2006Sep 13 2006

Publication series

NameProceedings of the ASME Design Engineering Technical Conference
Volume2006

Other

Other2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
Country/TerritoryUnited States
CityPhiladelphia, PA
Period9/10/069/13/06

ASJC Scopus subject areas

  • Modeling and Simulation
  • Mechanical Engineering
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

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