Optimization of chemical vapor deposition process

Pradeep George; Chang Gea Hae; Yogesh Jaluria

Optimization of chemical vapor deposition process

Pradeep George, Chang Gea Hae, Yogesh Jaluria

Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

Original language	English (US)
Title of host publication	Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
State	Published - 2006
Event	2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 - Philadelphia, PA, United States Duration: Sep 10 2006 → Sep 13 2006

Publication series

Name	Proceedings of the ASME Design Engineering Technical Conference
Volume	2006

Other

Other	2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006
Country	United States
City	Philadelphia, PA
Period	9/10/06 → 9/13/06

ASJC Scopus subject areas

Modeling and Simulation
Mechanical Engineering
Computer Science Applications
Computer Graphics and Computer-Aided Design

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George, P., Hae, C. G., & Jaluria, Y. (2006). Optimization of chemical vapor deposition process. In Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 (Proceedings of the ASME Design Engineering Technical Conference; Vol. 2006).

Optimization of chemical vapor deposition process. / George, Pradeep; Hae, Chang Gea; Jaluria, Yogesh.

Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. 2006. (Proceedings of the ASME Design Engineering Technical Conference; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

George, P, Hae, CG & Jaluria, Y 2006, Optimization of chemical vapor deposition process. in Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006. Proceedings of the ASME Design Engineering Technical Conference, vol. 2006, 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006, Philadelphia, PA, United States, 9/10/06.

@inproceedings{c65a600a4c6647c8b4af5c35be38e796,

title = "Optimization of chemical vapor deposition process",

abstract = "Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.",

author = "Pradeep George and Hae, {Chang Gea} and Yogesh Jaluria",

year = "2006",

language = "English (US)",

isbn = "079183784X",

series = "Proceedings of the ASME Design Engineering Technical Conference",

booktitle = "Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006",

note = "2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006 ; Conference date: 10-09-2006 Through 13-09-2006",

}

TY - GEN

T1 - Optimization of chemical vapor deposition process

AU - George, Pradeep

AU - Hae, Chang Gea

AU - Jaluria, Yogesh

PY - 2006

Y1 - 2006

N2 - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

AB - Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

UR - http://www.scopus.com/inward/record.url?scp=33751311077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751311077&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33751311077

SN - 079183784X

SN - 9780791837849

T3 - Proceedings of the ASME Design Engineering Technical Conference

BT - Proceedings of 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006

T2 - 2006 ASME International Design Engineering Technical Conferences and Computers and Information In Engineering Conference, DETC2006

Y2 - 10 September 2006 through 13 September 2006

ER -