Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon

Ghada Dushaq, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2020
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
StatePublished - 2020
EventCLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F183-CLEO-SI 2020

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2020
CountryUnited States
CityWashington
Period5/10/205/15/20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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