Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon

Ghada Dushaq; Mahmoud Rasras

Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.

Original language	English (US)
Title of host publication	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580767
State	Published - May 2020
Event	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2020-May
ISSN (Print)	1092-8081

Conference

Conference	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/Territory	United States
City	San Jose
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Dushaq, G., & Rasras, M. (2020). Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Article 9192174 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May). Institute of Electrical and Electronics Engineers Inc..

Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon. / Dushaq, Ghada; Rasras, Mahmoud.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9192174 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2020-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dushaq, G & Rasras, M 2020, Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., 9192174, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2020-May, Institute of Electrical and Electronics Engineers Inc., 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, United States, 5/10/20.

Dushaq, Ghada ; Rasras, Mahmoud. / Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping : Towards Light Sources on Silicon. 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

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title = "Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon",

abstract = "Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.",

author = "Ghada Dushaq and Mahmoud Rasras",

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Ordered Configuration of Strained Ge Nanostructures on Si using Mechanical Nano-Stamping: Towards Light Sources on Silicon

Abstract

Publication series

Conference

ASJC Scopus subject areas

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