Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon

Ghada Dushaq; Mahmoud Rasras

doi:10.1364/CLEO_SI.2020.STh4H.3

Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_SI.2020.STh4H.3
State	Published - 2020
Event	CLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F183-CLEO-SI 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/CLEO_SI.2020.STh4H.3

Cite this

Dushaq, G., & Rasras, M. (2020). Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon. In CLEO: Science and Innovations, CLEO_SI 2020 Article STh4H.3 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_SI.2020.STh4H.3

Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon. / Dushaq, Ghada; Rasras, Mahmoud.
CLEO: Science and Innovations, CLEO_SI 2020. Optica Publishing Group (formerly OSA), 2020. STh4H.3 (Optics InfoBase Conference Papers; Vol. Part F183-CLEO-SI 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dushaq, G & Rasras, M 2020, Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon. in CLEO: Science and Innovations, CLEO_SI 2020., STh4H.3, Optics InfoBase Conference Papers, vol. Part F183-CLEO-SI 2020, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, CLEO_SI 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_SI.2020.STh4H.3

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title = "Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon",

abstract = "Highly tensile-strained Ge nanostructures grown on pre-patterned (001) Si substrate is demonstrated. Using depth controlled nanoindentation, 2.7% strain value has been obtained. Results are verified by observing photoluminescence emission properties of the Ge/Si nanostructures.",

author = "Ghada Dushaq and Mahmoud Rasras",

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Ordered configuration of strained ge nanostructures on si using mechanical nano-stamping: Towards light sources on silicon

Abstract

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Conference

ASJC Scopus subject areas

Access to Document

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