Oriented growth of nanocrystalline gamma ferric oxide in electrophoretically deposited films

Tejashree M. Bhave; C. Balasubramanian; Harshada Nagar; Shailaja Kulkarni; Renu Pasricha; P. P. Bakare; S. K. Date; S. V. Bhoraskar

doi:10.1007/s10751-005-9165-5

Oriented growth of nanocrystalline gamma ferric oxide in electrophoretically deposited films

Tejashree M. Bhave, C. Balasubramanian, Harshada Nagar, Shailaja Kulkarni, Renu Pasricha, P. P. Bakare, S. K. Date, S. V. Bhoraskar

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Abstract

Films of nanocrystalline γ-Fe₂O₃ were deposited on silicon substrates by using the technique of electrophoretic deposition. The precursor powder was nanocrystalline γ-Fe₂O₃, which was synthesized, using DC arc plasma in the oxygen ambient by vapour-vapour interaction in gas phase condensation; at a stabilized arc current of 40 A. This powder was characterized by X-ray diffraction, Transmission Electron Microscopy, Vibrating Sample Magnetometer and Mössbauer Spectroscopy. An increase in directional coercivity was observed in case of films deposited on silicon substrates, which is dramatically significant. Preferred orientation of almost similar sized nanocrystalline magnetic domains in deposited films is evident from the results of X-ray diffraction and Transmission Electron Microscopy results. The preferred alignment of the nanocrystallites seems to be responsible for the significant changes observed in magnetic properties of films.

Original language	English (US)
Pages (from-to)	199-209
Number of pages	11
Journal	Hyperfine Interactions
Volume	160
Issue number	1-4
DOIs	https://doi.org/10.1007/s10751-005-9165-5
State	Published - Jan 2005

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Nuclear and High Energy Physics
Condensed Matter Physics
Physical and Theoretical Chemistry

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10.1007/s10751-005-9165-5

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title = "Oriented growth of nanocrystalline gamma ferric oxide in electrophoretically deposited films",

abstract = "Films of nanocrystalline γ-Fe2O3 were deposited on silicon substrates by using the technique of electrophoretic deposition. The precursor powder was nanocrystalline γ-Fe2O3, which was synthesized, using DC arc plasma in the oxygen ambient by vapour-vapour interaction in gas phase condensation; at a stabilized arc current of 40 A. This powder was characterized by X-ray diffraction, Transmission Electron Microscopy, Vibrating Sample Magnetometer and M{\"o}ssbauer Spectroscopy. An increase in directional coercivity was observed in case of films deposited on silicon substrates, which is dramatically significant. Preferred orientation of almost similar sized nanocrystalline magnetic domains in deposited films is evident from the results of X-ray diffraction and Transmission Electron Microscopy results. The preferred alignment of the nanocrystallites seems to be responsible for the significant changes observed in magnetic properties of films.",

author = "Bhave, {Tejashree M.} and C. Balasubramanian and Harshada Nagar and Shailaja Kulkarni and Renu Pasricha and Bakare, {P. P.} and Date, {S. K.} and Bhoraskar, {S. V.}",

note = "Funding Information: One of the authors Tejashree Bhave would like to acknowledge Council for Scientific and Industrial Research for Research Associateship.",

year = "2005",

month = jan,

doi = "10.1007/s10751-005-9165-5",

language = "English (US)",

volume = "160",

pages = "199--209",

journal = "Hyperfine Interactions",

issn = "0304-3843",

publisher = "Springer Nature",

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AU - Bhave, Tejashree M.

AU - Balasubramanian, C.

AU - Nagar, Harshada

AU - Kulkarni, Shailaja

AU - Pasricha, Renu

AU - Bakare, P. P.

AU - Date, S. K.

AU - Bhoraskar, S. V.

N1 - Funding Information: One of the authors Tejashree Bhave would like to acknowledge Council for Scientific and Industrial Research for Research Associateship.

PY - 2005/1

Y1 - 2005/1

N2 - Films of nanocrystalline γ-Fe2O3 were deposited on silicon substrates by using the technique of electrophoretic deposition. The precursor powder was nanocrystalline γ-Fe2O3, which was synthesized, using DC arc plasma in the oxygen ambient by vapour-vapour interaction in gas phase condensation; at a stabilized arc current of 40 A. This powder was characterized by X-ray diffraction, Transmission Electron Microscopy, Vibrating Sample Magnetometer and Mössbauer Spectroscopy. An increase in directional coercivity was observed in case of films deposited on silicon substrates, which is dramatically significant. Preferred orientation of almost similar sized nanocrystalline magnetic domains in deposited films is evident from the results of X-ray diffraction and Transmission Electron Microscopy results. The preferred alignment of the nanocrystallites seems to be responsible for the significant changes observed in magnetic properties of films.

AB - Films of nanocrystalline γ-Fe2O3 were deposited on silicon substrates by using the technique of electrophoretic deposition. The precursor powder was nanocrystalline γ-Fe2O3, which was synthesized, using DC arc plasma in the oxygen ambient by vapour-vapour interaction in gas phase condensation; at a stabilized arc current of 40 A. This powder was characterized by X-ray diffraction, Transmission Electron Microscopy, Vibrating Sample Magnetometer and Mössbauer Spectroscopy. An increase in directional coercivity was observed in case of films deposited on silicon substrates, which is dramatically significant. Preferred orientation of almost similar sized nanocrystalline magnetic domains in deposited films is evident from the results of X-ray diffraction and Transmission Electron Microscopy results. The preferred alignment of the nanocrystallites seems to be responsible for the significant changes observed in magnetic properties of films.

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JO - Hyperfine Interactions

JF - Hyperfine Interactions

IS - 1-4

ER -

Oriented growth of nanocrystalline gamma ferric oxide in electrophoretically deposited films

Abstract

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