Orthogonal spin transfer MRAM

D. Bedau; D. Backes; H. Liu; J. Langer; P. Manandhar; A. D. Kent

doi:10.1109/DRC.2011.5994472

Orthogonal spin transfer MRAM

D. Bedau, D. Backes, H. Liu, J. Langer, P. Manandhar, A. D. Kent

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	165-166
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994472
State	Published - 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994472

Cite this

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title = "Orthogonal spin transfer MRAM",

abstract = "Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]",

author = "D. Bedau and D. Backes and H. Liu and J. Langer and P. Manandhar and Kent, {A. D.}",

year = "2011",

doi = "10.1109/DRC.2011.5994472",

language = "English (US)",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

pages = "165--166",

booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

}

TY - GEN

T1 - Orthogonal spin transfer MRAM

AU - Bedau, D.

AU - Backes, D.

AU - Liu, H.

AU - Langer, J.

AU - Manandhar, P.

AU - Kent, A. D.

PY - 2011

Y1 - 2011

N2 - Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]

AB - Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]

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M3 - Conference contribution

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SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

SP - 165

EP - 166

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

T2 - 69th Device Research Conference, DRC 2011

Y2 - 20 June 2011 through 22 June 2011

ER -

Orthogonal spin transfer MRAM

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