Orthogonal spin transfer MRAM

D. Bedau, D. Backes, H. Liu, J. Langer, P. Manandhar, A. D. Kent

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching times and broad switching time distributions [Devolder 2008, Koch 2004]. This delay is due to the fact that the torque is zero if the layers are either parallel or antiparallel [Slonczewski 1996] and hence switching cannot be initiated by the torque alone. Typically the process is started by an initial misalignment of the free layer stemming from thermal excitations. Relying on thermal initiation leads to incoherent reversal with an unpredictable incubation delay in the ns range [Devolder 2008] and broad switching time distributions [Koch 2004]

    Original languageEnglish (US)
    Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
    Number of pages2
    StatePublished - 2011
    Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
    Duration: Jun 20 2011Jun 22 2011

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770


    Other69th Device Research Conference, DRC 2011
    Country/TerritoryUnited States
    CitySanta Barbara, CA

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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