Parallel memristors: Improving variation tolerance in memristive digital circuits

Jeyavijayan Rajendran, Ramesh Karri, Garrett S. Rose

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memristors are employed by a wide variety of applications such as neural networks, memory and digital logic. However, the process variation effects of memristors may affect these applications. In this research, we consider the effect of process variations in the thickness of the oxide layer of memristors that are used in Memristor-based Threshold Logic (MTL) gates. As the effect of variations is less pronounced in high memristance values, a variation tolerant design without any degradation in speed is achieved by having a number of high memristance devices in parallel (redundancy factor). We propose an algorithm for the MTL gates to determine the number of memristors in parallel and the variation-minimal high memristance state. A power optimization algorithm is also proposed to map gates in a design using different libraries that have different performance characteristics. Finally, we present the power, delay performance and also the redundancy factor of memristors for various benchmark circuits.

Original languageEnglish (US)
Title of host publication2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Pages2241-2244
Number of pages4
DOIs
StatePublished - 2011
Event2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil
Duration: May 15 2011May 18 2011

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
CountryBrazil
CityRio de Janeiro
Period5/15/115/18/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Rajendran, J., Karri, R., & Rose, G. S. (2011). Parallel memristors: Improving variation tolerance in memristive digital circuits. In 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 (pp. 2241-2244). [5938047] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2011.5938047