Phenomenological electronic stopping-power model for molecular dynamics and Monte Carlo simulation of ion implantation into silicon

Chemical Compounds

• Stopping Power 100%
• Ion Implantation 71%
• Monte Carlo Method 61%
• Molecular Dynamics 43%
• Secondary Ion Mass Spectroscopy 31%
• Doping Material 25%
• Collision 14%
• Charge Density 14%
• Boron Atom 12%
• Ion 11%
• Proton 9%
• Energy 6%

Physics & Astronomy

• stopping power 67%
• ion implantation 53%
• molecular dynamics 42%
• silicon 31%
• electronics 30%
• simulation 22%
• secondary ion mass spectrometry 17%
• profiles 13%
• electrons 10%
• physics 10%
• arsenic 8%
• stopping 8%
• ions 7%
• boron 7%
• damping 6%
• tuning 6%
• protons 5%
• collisions 5%
• radii 5%

Engineering & Materials Science

• Ion implantation 79%
• Power electronics 56%
• Silicon 45%
• Electrons 25%
• Secondary ion mass spectrometry 25%
• Doping (additives) 18%
• Ions 15%
• Physics 14%
• Computer simulation 13%
• Arsenic 12%
• Charge density 11%
• Protons 10%
• Boron 9%
• Crystalline materials 8%
• Tuning 6%
• Damping 6%