Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in this oxides

M. Rasras, I. De Wolf, G. Groeseneken, B. Kaczer, R. Degraeve, H. E. Maes

Research output: Contribution to journalConference articlepeer-review

Abstract

The origin of the FN-induced substrate hole current is re-investigated in more detail. It is unambiguously demonstrated that not the anode hole injection, but the generation of electron-hole pairs in the substrate by FN-induced photons in the gate is the dominant source of the substrate hole current in thin oxides. Consequently, the generally accepted explanation of oxide degradation based on the anode hole injection model has to be revised.

Original languageEnglish (US)
Pages (from-to)465-468
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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