Abstract
The origin of the FN-induced substrate hole current is re-investigated in more detail. It is unambiguously demonstrated that not the anode hole injection, but the generation of electron-hole pairs in the substrate by FN-induced photons in the gate is the dominant source of the substrate hole current in thin oxides. Consequently, the generally accepted explanation of oxide degradation based on the anode hole injection model has to be revised.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 465-468 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: Dec 5 1999 → Dec 8 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry