Photodetection by barrier modulation in Cu-diffused Au/CdS junctions

H. K. Bücher; B. C. Burkey; G. Lubberts; E. L. Wolf

doi:10.1063/1.1654768

Photodetection by barrier modulation in Cu-diffused Au/CdS junctions

H. K. Bücher, B. C. Burkey, G. Lubberts, E. L. Wolf

Applied Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron per photon gain of order 10⁶ in narrow Cu-compensated Au/CdS junctions. The light dependence of the barrier, whose peak lies within the semiconductor, is measured directly by internal photoemission. A model of the junction is presented and the limiting threshold and gain of this type of device is estimated.

Original language	English (US)
Pages (from-to)	617-619
Number of pages	3
Journal	Applied Physics Letters
Volume	23
Issue number	11
DOIs	https://doi.org/10.1063/1.1654768
State	Published - 1973

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1654768

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title = "Photodetection by barrier modulation in Cu-diffused Au/CdS junctions",

abstract = "Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron per photon gain of order 106 in narrow Cu-compensated Au/CdS junctions. The light dependence of the barrier, whose peak lies within the semiconductor, is measured directly by internal photoemission. A model of the junction is presented and the limiting threshold and gain of this type of device is estimated.",

author = "B{\"u}cher, {H. K.} and Burkey, {B. C.} and G. Lubberts and Wolf, {E. L.}",

year = "1973",

doi = "10.1063/1.1654768",

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journal = "Applied Physics Letters",

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AU - Bücher, H. K.

AU - Burkey, B. C.

AU - Lubberts, G.

AU - Wolf, E. L.

PY - 1973

Y1 - 1973

N2 - Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron per photon gain of order 106 in narrow Cu-compensated Au/CdS junctions. The light dependence of the barrier, whose peak lies within the semiconductor, is measured directly by internal photoemission. A model of the junction is presented and the limiting threshold and gain of this type of device is estimated.

AB - Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron per photon gain of order 106 in narrow Cu-compensated Au/CdS junctions. The light dependence of the barrier, whose peak lies within the semiconductor, is measured directly by internal photoemission. A model of the junction is presented and the limiting threshold and gain of this type of device is estimated.

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Photodetection by barrier modulation in Cu-diffused Au/CdS junctions

Abstract

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