PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN Cu-DIFFUSED Au-CdS DIODES.

G. Lubberts, H. K. Buecher, B. C. Burkey, E. L. Wolf

Research output: Contribution to conferencePaperpeer-review

Abstract

Modified Au-Cds:Cu Schottky barriers were prepared by diffusing Cu to a depth of 0. 1 to 0. 2 mu m into single crystals of CdS, prior to evaporating rectifying Au contacts. Modulation of essentially thermionic forward current by light-induced lowering of an electrostatic barrier leads to steady-state electron-per-photon gains in excess of 10**6 at light intensities lower than 5 multiplied by 10**1**1 photons cm** minus **2 sec** minus **1 where response times exceed 1 sec. Barrier-height determinations, in the dark and under illumination with 5000-A light, by means of internal photoemission, thermal activation energy, and J-V measurements, show unequivocally that under saturating light conditions the potential barrier is reduced by 0. 23 plus or minus 0. 03 V.

Original languageEnglish (US)
Pages92-95
Number of pages4
StatePublished - 1973
EventInt Electron Devices Meet, 19th, Tech Dig, Pap - Washington, DC, USA
Duration: Dec 3 1973Dec 5 1973

Other

OtherInt Electron Devices Meet, 19th, Tech Dig, Pap
CityWashington, DC, USA
Period12/3/7312/5/73

ASJC Scopus subject areas

  • Engineering(all)

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