Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible-Near-Infrared Photodetection

Ghada Dushaq, Mahmoud Rasras

Research output: Contribution to journalArticlepeer-review


Novel group IV - V 2D semiconductors (e.g., GeAs and SiAs) have arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has a wide tunable band gap, excellent thermodynamic stability, and strong in-plane anisotropy. However, their photonic and optoelectronic properties have not been extensively explored so far. This work demonstrates a broadband back-to-back metal-semiconductor-metal (MSM) Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. The photodetector exhibited a Schottky barrier height (SBH) in the range of 0.40-0.49 eV. Additionally, it showed a low dark current of 1.8 nA with stable, reproducible, and excellent broadband spectral response from UV to optical communication wavelengths. The highest measured responsivity in the visible is 905 A/W at 660 nm wavelength and 98 A/W for 1064 nm near-infrared at an applied voltage of -3 V and zero back gate. Most notably, the planner configuration of this GeAs photodetector showed a low detector capacitance below 1.2 pf and low voltage operation (<1 V). The stability and broadband response of the device are promising for this 2D material's application in advanced optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)21499-21506
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number18
StatePublished - May 12 2021


  • 2D GeAs
  • NIR photodetection
  • Schottky barrier
  • optoelectronics
  • photodiodes

ASJC Scopus subject areas

  • General Materials Science


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