Planar Schottky photodiode based on multilayered 2D GeAs for high-performance VIS-NIR broadband detection

Ghada Dushaq, Mahmoud Rasras

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate a metal-semiconductor-metal Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. Results show low dark current with stable, reproducible, and remarkable broadband spectral response from UV to optical communication wavelengths.

Original languageEnglish (US)
Article numberJW1A.16
JournalOptics InfoBase Conference Papers
StatePublished - 2021
EventCLEO: QELS_Fundamental Science, CLEO: QELS 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: May 9 2021May 14 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Fingerprint

Dive into the research topics of 'Planar Schottky photodiode based on multilayered 2D GeAs for high-performance VIS-NIR broadband detection'. Together they form a unique fingerprint.

Cite this