Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride

Mohammed AlAloul, Mahmoud Rasras

Research output: Contribution to journalArticlepeer-review


Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only ∼2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride on the silicon-on-insulator platform. The device performance is quantified by its responsivity, operation speed, and noise equivalent power. Its bandwidth exceeds 100 GHz, and it exhibits a nearly flat photoresponse across the telecom C-band. The photodetector responsivity is as high as 1.4 A/W (1.1 A/W external) at an ultra-compact length of 3.5 μm, which is the most compact footprint reported for a graphene-based waveguide photodetector. Furthermore, it operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP<20 pW= p Hz).

Original languageEnglish (US)
Pages (from-to)602-610
Number of pages9
JournalJournal of the Optical Society of America B: Optical Physics
Issue number2
StatePublished - Oct 2021

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics


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