TY - JOUR
T1 - Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride
AU - AlAloul, Mohammed
AU - Rasras, Mahmoud
N1 - Publisher Copyright:
©2021 Optical Society of America.
PY - 2021/10
Y1 - 2021/10
N2 - Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only ∼2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride on the silicon-on-insulator platform. The device performance is quantified by its responsivity, operation speed, and noise equivalent power. Its bandwidth exceeds 100 GHz, and it exhibits a nearly flat photoresponse across the telecom C-band. The photodetector responsivity is as high as 1.4 A/W (1.1 A/W external) at an ultra-compact length of 3.5 μm, which is the most compact footprint reported for a graphene-based waveguide photodetector. Furthermore, it operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP<20 pW= p Hz).
AB - Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only ∼2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride on the silicon-on-insulator platform. The device performance is quantified by its responsivity, operation speed, and noise equivalent power. Its bandwidth exceeds 100 GHz, and it exhibits a nearly flat photoresponse across the telecom C-band. The photodetector responsivity is as high as 1.4 A/W (1.1 A/W external) at an ultra-compact length of 3.5 μm, which is the most compact footprint reported for a graphene-based waveguide photodetector. Furthermore, it operates at zero-bias, consumes zero energy, and has an ultra-low intrinsic noise equivalent power (NEP<20 pW= p Hz).
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U2 - 10.1364/JOSAB.416520
DO - 10.1364/JOSAB.416520
M3 - Article
AN - SCOPUS:85103484109
SN - 0740-3224
VL - 38
SP - 602
EP - 610
JO - Journal of the Optical Society of America B: Optical Physics
JF - Journal of the Optical Society of America B: Optical Physics
IS - 2
ER -