Abstract
The dynamical behavior of the charge in quantum wells is studied. We obtain the tunneling time as function of geometric parameters. Since at low carrier density the intraband relaxation time is determined by LO-phonon-carrier scattering, we calculate, as a function of several parameters, the energy corrections and the scattering rates within each band, this is done by using a many body perturbative formalism, considering both screened and unscreened potentials. We compare results for GaAs and CdTe double quantum wells.
Original language | English (US) |
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Pages (from-to) | 297-299 |
Number of pages | 3 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 17 |
Issue number | 1-4 |
DOIs | |
State | Published - Apr 2003 |
Event | Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: Jul 22 2002 → Jul 26 2002 |
Keywords
- Phonon interaction
- Quantum wells
- Tunneling time
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics