Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, E. Asl Soliemani

Research output: Contribution to journalConference article

Abstract

Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 10 4 and an effective hole mobility of 110 cm 2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

Original languageEnglish (US)
Pages (from-to)101-105
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume814
StatePublished - Dec 1 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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