Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

B. Hekmatshoar; D. Shahrjerdi; S. Mohajerzadeh; A. Khakifirooz; M. Robertson; E. Asl Soliemani

doi:10.1557/proc-814-i6.2

Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, E. Asl Soliemani

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 10⁴ and an effective hole mobility of 110 cm²/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

Original language	English (US)
Pages (from-to)	101-105
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	814
DOIs	https://doi.org/10.1557/proc-814-i6.2
State	Published - 2004
Event	Flexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 16 2004

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{a502b3944ff04a4dbcaaf7cd19304dbd,

title = "Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors",

abstract = "Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104 and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.",

author = "B. Hekmatshoar and D. Shahrjerdi and S. Mohajerzadeh and A. Khakifirooz and M. Robertson and {Asl Soliemani}, E.",

year = "2004",

doi = "10.1557/proc-814-i6.2",

language = "English (US)",

volume = "814",

pages = "101--105",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Flexible Electronics 2004 - Materials and Device Technology ; Conference date: 13-04-2004 Through 16-04-2004",

}

TY - JOUR

T1 - Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

AU - Hekmatshoar, B.

AU - Shahrjerdi, D.

AU - Mohajerzadeh, S.

AU - Khakifirooz, A.

AU - Robertson, M.

AU - Asl Soliemani, E.

PY - 2004

Y1 - 2004

N2 - Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104 and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

AB - Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104 and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.

UR - http://www.scopus.com/inward/record.url?scp=12844272797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844272797&partnerID=8YFLogxK

U2 - 10.1557/proc-814-i6.2

DO - 10.1557/proc-814-i6.2

M3 - Conference article

AN - SCOPUS:12844272797

SN - 0272-9172

VL - 814

SP - 101

EP - 105

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Flexible Electronics 2004 - Materials and Device Technology

Y2 - 13 April 2004 through 16 April 2004

ER -

Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors

Abstract

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