Precessional reversal in orthogonal spin transfer magnetic random access memory devices

H. Liu, D. Bedau, D. Backes, J. A. Katine, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Single-shot time-resolved resistance measurements have been used to determine the magnetization reversal mechanisms of orthogonal spin transfer magnetic random access memory (OST-MRAM) devices at nanosecond time scales. There is a strong asymmetry between antiparallel (AP) to parallel (P) and P to AP transitions under the same pulse conditions. P to AP transitions are shown to occur by precession of the free layer magnetization, while the AP to P transition is typically direct, occurring in less than 200 ps. We associate the asymmetry with spin torques perpendicular to the plane of the free layer, an important characteristic of OST-MRAM bit cells that can be used to optimize device performance.

    Original languageEnglish (US)
    Article number032403
    JournalApplied Physics Letters
    Volume101
    Issue number3
    DOIs
    StatePublished - Jul 16 2012

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint Dive into the research topics of 'Precessional reversal in orthogonal spin transfer magnetic random access memory devices'. Together they form a unique fingerprint.

  • Cite this