Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor-electrolyte interfaces

W. P. Zurawsky; J. E. Littman; H. G. Drickamer

doi:10.1063/1.332483

Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor-electrolyte interfaces

W. P. Zurawsky, J. E. Littman, H. G. Drickamer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

Original language	English (US)
Pages (from-to)	3216-3219
Number of pages	4
Journal	Journal of Applied Physics
Volume	54
Issue number	6
DOIs	https://doi.org/10.1063/1.332483
State	Published - 1983

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor-electrolyte interfaces",

abstract = "The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.",

author = "Zurawsky, {W. P.} and Littman, {J. E.} and Drickamer, {H. G.}",

year = "1983",

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AU - Littman, J. E.

AU - Drickamer, H. G.

PY - 1983

Y1 - 1983

N2 - The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

AB - The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

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Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor-electrolyte interfaces

Abstract

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