Pressure induced conduction and valence band shifts in InP and GaAs from measurements at semiconductor-electrolyte interfaces

W. P. Zurawsky, J. E. Littman, H. G. Drickamer

Research output: Contribution to journalArticle

Abstract

The effect of pressure on the band gap and flatband potential of n- and p-type InP and GaAs was studied to 10 kbar at 300 K. For both InP and GaAs it was determined that the increase of the energy gap of the direct transition is to first order due to an increase in energy of the conduction band edge.

Original languageEnglish (US)
Pages (from-to)3216-3219
Number of pages4
JournalJournal of Applied Physics
Volume54
Issue number6
DOIs
StatePublished - 1983

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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