Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration

F. Ferdousi, J. Sarkar, S. Tang, D. Shahrjerdi, T. Akyol, E. Tutuc, S. K. Banerjee

Research output: Contribution to journalArticlepeer-review


This work presents vertical flash memory devices with protein-assembled PbSe nanocrystals as a floating gate and Al 2O 3 as a control oxide. The advantage of a vertical structure is that it improves cell density. Protein assembly improves uniformity of nanocrystals, which reduces threshold voltage variation among devices. The introduction of Al 2O 3 as a control oxide provided lower voltage/faster operation and hence less power consumption compared with the devices fabricated with SiO 2. The integration of Al 2O 3 appeared to be compatible with the protein assembly approach. In conclusion, Al 2O 3 has the potential to become the high-k control oxide due to its relatively high electron/hole barrier heights, and high permittivity.

Original languageEnglish (US)
Pages (from-to)438-442
Number of pages5
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 2009


  • High-k dielectric
  • Nanocrystal memory devices
  • Protein assembly
  • Vertical structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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