Proximity effect tunnelling as a probe of metallurgical processes in thin films

B. F. Donovan-Vojtovic; S. A. Dodds; M. S. Nasser; P. M. Chaikin

doi:10.1080/14786437608222058

Proximity effect tunnelling as a probe of metallurgical processes in thin films

B. F. Donovan-Vojtovic, S. A. Dodds, M. S. Nasser, P. M. Chaikin

Research output: Contribution to journal › Article › peer-review

Abstract

Electron tunnelling in a junction of the form Al‑oxide-M₁-M₂, where M₁ and M₂ are metals at least one of which is a superconductor, reveals structure at the phonon frequencies of both M₁ and M₂. For thin films peaks in the phonon density of states from M, appear as dips in d²V/dl³ whereas peaks in the phonon density of states from M₂ appear inverted. It is therefore possible to determine which metal is adjacent to the oxide and to monitor changes in this material as diffusion, alloying or formation of intermetallics take place in films as thin as 200 Å.

Original language	English (US)
Pages (from-to)	893-901
Number of pages	9
Journal	Philosophical Magazine
Volume	34
Issue number	5
DOIs	https://doi.org/10.1080/14786437608222058
State	Published - Nov 1976

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Engineering(all)
Physics and Astronomy(all)

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title = "Proximity effect tunnelling as a probe of metallurgical processes in thin films",

abstract = "Electron tunnelling in a junction of the form Al‑oxide-M1-M2, where M1 and M2 are metals at least one of which is a superconductor, reveals structure at the phonon frequencies of both M1 and M2. For thin films peaks in the phonon density of states from M, appear as dips in d2V/dl3 whereas peaks in the phonon density of states from M2 appear inverted. It is therefore possible to determine which metal is adjacent to the oxide and to monitor changes in this material as diffusion, alloying or formation of intermetallics take place in films as thin as 200 {\AA}.",

author = "Donovan-Vojtovic, {B. F.} and Dodds, {S. A.} and Nasser, {M. S.} and Chaikin, {P. M.}",

note = "Funding Information: Soon after the discovery of superconducting tunnelling (Giaever 1960) several investigators found that the tunnelling characteristics of junctions fabricated with strong coupling superconductors exhibited structure that was Research supported in part by ONR through Contract No. N00014-76-c-o245. and by NSF through Grant No. NSF DMR 72-02936 A03. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",

year = "1976",

month = nov,

doi = "10.1080/14786437608222058",

language = "English (US)",

volume = "34",

pages = "893--901",

journal = "Philosophical Magazine",

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T1 - Proximity effect tunnelling as a probe of metallurgical processes in thin films

AU - Donovan-Vojtovic, B. F.

AU - Dodds, S. A.

AU - Nasser, M. S.

AU - Chaikin, P. M.

N1 - Funding Information: Soon after the discovery of superconducting tunnelling (Giaever 1960) several investigators found that the tunnelling characteristics of junctions fabricated with strong coupling superconductors exhibited structure that was Research supported in part by ONR through Contract No. N00014-76-c-o245. and by NSF through Grant No. NSF DMR 72-02936 A03. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.

PY - 1976/11

Y1 - 1976/11

N2 - Electron tunnelling in a junction of the form Al‑oxide-M1-M2, where M1 and M2 are metals at least one of which is a superconductor, reveals structure at the phonon frequencies of both M1 and M2. For thin films peaks in the phonon density of states from M, appear as dips in d2V/dl3 whereas peaks in the phonon density of states from M2 appear inverted. It is therefore possible to determine which metal is adjacent to the oxide and to monitor changes in this material as diffusion, alloying or formation of intermetallics take place in films as thin as 200 Å.

AB - Electron tunnelling in a junction of the form Al‑oxide-M1-M2, where M1 and M2 are metals at least one of which is a superconductor, reveals structure at the phonon frequencies of both M1 and M2. For thin films peaks in the phonon density of states from M, appear as dips in d2V/dl3 whereas peaks in the phonon density of states from M2 appear inverted. It is therefore possible to determine which metal is adjacent to the oxide and to monitor changes in this material as diffusion, alloying or formation of intermetallics take place in films as thin as 200 Å.

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Proximity effect tunnelling as a probe of metallurgical processes in thin films

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