Abstract
Techniques available for real time, in situ monitoring of surface chemistry during plasma processing are reviewed. Emphasis is given to recent uses of attenuated-total-reflection Fourier transform infrared (ATR-FTIR) spectroscopy to study surface bond vibrations during plasma cleaning and passivation of Si and GaAs surfaces. Examples are chosen to demonstrate the utility of real-time monitoring of surfaces for developing and optimizing plasma processes used in manufacturing of electronic and optoelectronic devices.
Original language | English (US) |
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Pages (from-to) | 1381-1388 |
Number of pages | 8 |
Journal | Pure and Applied Chemistry |
Volume | 66 |
Issue number | 6 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- General Chemistry
- General Chemical Engineering