Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3. Our devices show mobility values of over 8000 cm 2 /V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

Original languageEnglish (US)
Article number062107
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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