Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

Seyoung Kim; Junghyo Nah; Insun Jo; Davood Shahrjerdi; Luigi Colombo; Zhen Yao; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1063/1.3077021

Realization of a high mobility dual-gated graphene field-effect transistor with Al₂O₃ dielectric

Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricate and characterize dual-gated graphene field-effect transistors using Al₂O₃ as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al ₂O₃. Our devices show mobility values of over 8000 cm ² /V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

Original language	English (US)
Article number	062107
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3077021
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3077021

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title = "Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric",

abstract = "We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3. Our devices show mobility values of over 8000 cm 2 /V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.",

author = "Seyoung Kim and Junghyo Nah and Insun Jo and Davood Shahrjerdi and Luigi Colombo and Zhen Yao and Emanuel Tutuc and Banerjee, {Sanjay K.}",

note = "Funding Information: We thank D. Yang, R. Ruoff, and S. Adam for useful discussions. This work is supported by NRI-SWAN, and by DARPA Contract FA8650-08-C-7838 through the CERA program and IBM-UT subcontract agreement W0853811. ",

year = "2009",

doi = "10.1063/1.3077021",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

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T1 - Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

AU - Kim, Seyoung

AU - Nah, Junghyo

AU - Jo, Insun

AU - Shahrjerdi, Davood

AU - Colombo, Luigi

AU - Yao, Zhen

AU - Tutuc, Emanuel

AU - Banerjee, Sanjay K.

N1 - Funding Information: We thank D. Yang, R. Ruoff, and S. Adam for useful discussions. This work is supported by NRI-SWAN, and by DARPA Contract FA8650-08-C-7838 through the CERA program and IBM-UT subcontract agreement W0853811.

PY - 2009

Y1 - 2009

N2 - We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3. Our devices show mobility values of over 8000 cm 2 /V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

AB - We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3. Our devices show mobility values of over 8000 cm 2 /V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

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Realization of a high mobility dual-gated graphene field-effect transistor with Al₂O₃ dielectric

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