Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah; E. S. Liu; D. Shahrjerdi; K. M. Varahramyan; S. K. Banerjee; E. Tutuc

doi:10.1063/1.3079410

Realization of dual-gated Ge- Si_xGe_1-x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate dual-gated germanium (Ge)-silicon germanium (Si _xGe_1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 10¹⁵ cm^-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.

Original language	English (US)
Article number	063117
Journal	Applied Physics Letters
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.3079410
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3079410

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@article{53949a1764764461822e5505b04f087d,

title = "Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain",

abstract = "We demonstrate dual-gated germanium (Ge)-silicon germanium (Si xGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.",

author = "Junghyo Nah and Liu, {E. S.} and D. Shahrjerdi and Varahramyan, {K. M.} and Banerjee, {S. K.} and E. Tutuc",

note = "Funding Information: We acknowledge I.B.M. T. J. Watson Research Center for support. This work was funded by DARPA under Contract Nos. HR0011-08-1-0050 and N66001-07-12013.",

year = "2009",

doi = "10.1063/1.3079410",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

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TY - JOUR

T1 - Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

AU - Nah, Junghyo

AU - Liu, E. S.

AU - Shahrjerdi, D.

AU - Varahramyan, K. M.

AU - Banerjee, S. K.

AU - Tutuc, E.

N1 - Funding Information: We acknowledge I.B.M. T. J. Watson Research Center for support. This work was funded by DARPA under Contract Nos. HR0011-08-1-0050 and N66001-07-12013.

PY - 2009

Y1 - 2009

N2 - We demonstrate dual-gated germanium (Ge)-silicon germanium (Si xGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.

AB - We demonstrate dual-gated germanium (Ge)-silicon germanium (Si xGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.

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DO - 10.1063/1.3079410

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JF - Applied Physics Letters

IS - 6

M1 - 063117

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Realization of dual-gated Ge- Si_xGe_1-x core-shell nanowire field effect transistors with highly doped source and drain

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