Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate dual-gated germanium (Ge)-silicon germanium (Si xGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high- κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.

Original languageEnglish (US)
Article number063117
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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