@article{abbfd20298174f7a87dcb43249cec882,
title = "Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing",
keywords = "anomalous Hall effect, magnetic logic, negative differential resistance, nonvolatile memory, spin Hall effect",
author = "Zhaochu Luo and Ziyao Lu and Chengyue Xiong and Tao Zhu and Wei Wu and Qiang Zhang and Huaqiang Wu and Xixiang Zhang and Xiaozhong Zhang",
note = "Funding Information: The authors thank Prof. John Q. Xiao, Prof. Wei Han, and Dr. Caihua Wan for profound discussions and comments. This work was sponsored by the National Science Foundation of China (Grant Nos. 11234007, 51471093, and 11574375) and the National Basic Research Program of China (Grant No. 2012CB933102). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2017",
month = jan,
doi = "10.1002/adma.201605027",
language = "English (US)",
volume = "29",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "4",
}