Abstract
Researchers proposed a new magnetic logic combining the advantages of both spin-based and magnetic-field-based logic by coupling the anomalous Hall effect in magnetic materials and the negative differential resistance (NDR) phenomenon in semiconductors. They introduced a nonlinear semiconductor component with NDR phenomenon into the magnetic logic to improve output performance. For simplicity and flexibility the NDR component composed of silicon-based complementary bipolar transistors was adopted in the proof-of-concept experiment.
| Original language | English (US) |
|---|---|
| Article number | 1605027 |
| Journal | Advanced Materials |
| Volume | 29 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2017 |
Keywords
- anomalous Hall effect
- magnetic logic
- negative differential resistance
- nonvolatile memory
- spin Hall effect
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Luo, Z., Lu, Z., Xiong, C., Zhu, T., Wu, W., Zhang, Q., Wu, H., Zhang, X., & Zhang, X. (2017). Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing. Advanced Materials, 29(4), [1605027]. https://doi.org/10.1002/adma.201605027