Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo, Ziyao Lu, Chengyue Xiong, Tao Zhu, Wei Wu, Qiang Zhang, Huaqiang Wu, Xixiang Zhang, Xiaozhong Zhang

Research output: Contribution to journalArticle

Abstract

Researchers proposed a new magnetic logic combining the advantages of both spin-based and magnetic-field-based logic by coupling the anomalous Hall effect in magnetic materials and the negative differential resistance (NDR) phenomenon in semiconductors. They introduced a nonlinear semiconductor component with NDR phenomenon into the magnetic logic to improve output performance. For simplicity and flexibility the NDR component composed of silicon-based complementary bipolar transistors was adopted in the proof-of-concept experiment.

Original languageEnglish (US)
Article number1605027
JournalAdvanced Materials
Volume29
Issue number4
DOIs
StatePublished - 2017

Keywords

  • anomalous Hall effect
  • magnetic logic
  • negative differential resistance
  • nonvolatile memory
  • spin Hall effect

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Luo, Z., Lu, Z., Xiong, C., Zhu, T., Wu, W., Zhang, Q., Wu, H., Zhang, X., & Zhang, X. (2017). Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing. Advanced Materials, 29(4), [1605027]. https://doi.org/10.1002/adma.201605027