Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo; Ziyao Lu; Chengyue Xiong; Tao Zhu; Wei Wu; Qiang Zhang; Huaqiang Wu; Xixiang Zhang; Xiaozhong Zhang

doi:10.1002/adma.201605027

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Zhaochu Luo, Ziyao Lu, Chengyue Xiong, Tao Zhu, Wei Wu, Qiang Zhang, Huaqiang Wu, Xixiang Zhang, Xiaozhong Zhang

Core Technology Platforms

Research output: Contribution to journal › Article › peer-review

Abstract

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10 3 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

Original language	English (US)
Article number	1605027
Journal	Advanced Materials
Volume	29
Issue number	4
DOIs	https://doi.org/10.1002/adma.201605027
State	Published - Jan 2017

Keywords

anomalous Hall effect
magnetic logic
negative differential resistance
nonvolatile memory
spin Hall effect

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201605027

Cite this

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title = "Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing",

abstract = "In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10 3 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method. ",

keywords = "anomalous Hall effect, magnetic logic, negative differential resistance, nonvolatile memory, spin Hall effect",

author = "Zhaochu Luo and Ziyao Lu and Chengyue Xiong and Tao Zhu and Wei Wu and Qiang Zhang and Huaqiang Wu and Xixiang Zhang and Xiaozhong Zhang",

note = "Funding Information: The authors thank Prof. John Q. Xiao, Prof. Wei Han, and Dr. Caihua Wan for profound discussions and comments. This work was sponsored by the National Science Foundation of China (Grant Nos. 11234007, 51471093, and 11574375) and the National Basic Research Program of China (Grant No. 2012CB933102).",

year = "2017",

month = jan,

doi = "10.1002/adma.201605027",

language = "English (US)",

volume = "29",

journal = "Advanced Materials",

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TY - JOUR

T1 - Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

AU - Luo, Zhaochu

AU - Lu, Ziyao

AU - Xiong, Chengyue

AU - Zhu, Tao

AU - Wu, Wei

AU - Zhang, Qiang

AU - Wu, Huaqiang

AU - Zhang, Xixiang

AU - Zhang, Xiaozhong

N1 - Funding Information: The authors thank Prof. John Q. Xiao, Prof. Wei Han, and Dr. Caihua Wan for profound discussions and comments. This work was sponsored by the National Science Foundation of China (Grant Nos. 11234007, 51471093, and 11574375) and the National Basic Research Program of China (Grant No. 2012CB933102).

PY - 2017/1

Y1 - 2017/1

N2 - In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10 3 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

AB - In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>10 3 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.

KW - anomalous Hall effect

KW - magnetic logic

KW - negative differential resistance

KW - nonvolatile memory

KW - spin Hall effect

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VL - 29

JO - Advanced Materials

JF - Advanced Materials

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ER -

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Abstract

Keywords

ASJC Scopus subject areas

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