Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

Saurabh J. Ullal; Tae Won Kim; Vahid Vahedi; Eray S. Aydil

doi:10.1116/1.1562176

Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

Saurabh J. Ullal, Tae Won Kim, Vahid Vahedi, Eray S. Aydil

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl₂ plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.

Original language	English (US)
Pages (from-to)	589-595
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	3
DOIs	https://doi.org/10.1116/1.1562176
State	Published - May 2003

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{356ed5ec2bdc4c8b92511d7ed1d09802,

title = "Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon",

abstract = "The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl2 plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.",

author = "Ullal, {Saurabh J.} and Kim, {Tae Won} and Vahid Vahedi and Aydil, {Eray S.}",

year = "2003",

month = may,

doi = "10.1116/1.1562176",

language = "English (US)",

volume = "21",

pages = "589--595",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

AU - Ullal, Saurabh J.

AU - Kim, Tae Won

AU - Vahedi, Vahid

AU - Aydil, Eray S.

PY - 2003/5

Y1 - 2003/5

N2 - The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl2 plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.

AB - The transients in plasma composition and ion flux due to changing chamber wall conditions during Cl2 plasma etching of Si were studied. Silicon chlorides present in the discharge during etching of Si react with residual O present in the discharge to coat the chamber walls with a thin glassy silicon oxychloride film. The time scale of the transients was determined by how fast the walls are covered with the silicon oxychloride film.

UR - http://www.scopus.com/inward/record.url?scp=0038274546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038274546&partnerID=8YFLogxK

U2 - 10.1116/1.1562176

DO - 10.1116/1.1562176

M3 - Article

AN - SCOPUS:0038274546

SN - 0734-2101

VL - 21

SP - 589

EP - 595

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon

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