Abstract
Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated that these techniques allow non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.
Original language | English (US) |
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Pages (from-to) | 124-128 |
Number of pages | 5 |
Journal | Annual Proceedings - Reliability Physics (Symposium) |
State | Published - 1998 |
Event | Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA Duration: Mar 31 1998 → Apr 2 1998 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality