Reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf, D. J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. E. Maes

Research output: Contribution to journalConference article

Abstract

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated that these techniques allow non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

Original languageEnglish (US)
Pages (from-to)124-128
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1998
EventProceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA
Duration: Mar 31 1998Apr 2 1998

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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