Abstract
We demonstrate the fabrication of high-performance Ge-SixGe 1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.
Original language | English (US) |
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Article number | 5353753 |
Pages (from-to) | 491-495 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 57 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2010 |
Keywords
- Core-shell
- Field-effect transistor (FET)
- Nanowire (NW)
- Silicon-germanium
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering