Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors

Junghyo Nah; En Shao Liu; Kamran M. Varahramyan; Davood Shahrjerdi; Sanjay K. Banerjee; Emanuel Tutuc

doi:10.1109/TED.2009.2037406

Scaling properties of Ge-Si_xGe_1-x coreshell nanowire field-effect transistors

Junghyo Nah, En Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K. Banerjee, Emanuel Tutuc

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the fabrication of high-performance Ge-Si_xGe _1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.

Original language	English (US)
Article number	5353753
Pages (from-to)	491-495
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	2
DOIs	https://doi.org/10.1109/TED.2009.2037406
State	Published - Feb 2010

Keywords

Core-shell
Field-effect transistor (FET)
Nanowire (NW)
Silicon-germanium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{8232b176295447c5ba94e86ad3e0fec6,

title = "Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors",

abstract = "We demonstrate the fabrication of high-performance Ge-SixGe 1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.",

keywords = "Core-shell, Field-effect transistor (FET), Nanowire (NW), Silicon-germanium",

author = "Junghyo Nah and Liu, {En Shao} and Varahramyan, {Kamran M.} and Davood Shahrjerdi and Banerjee, {Sanjay K.} and Emanuel Tutuc",

note = "Funding Information: Manuscript received July 28, 2009; revised November 16, 2009. First published December 15, 2009; current version published January 22, 2010. This work was supported by the Defense Advanced Research Projects Agency under Contracts HR0011-08-1-0050 and N66001-07-12013. The review of this paper was arranged by Editor H. S. Momose.",

year = "2010",

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doi = "10.1109/TED.2009.2037406",

language = "English (US)",

volume = "57",

pages = "491--495",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors

AU - Nah, Junghyo

AU - Liu, En Shao

AU - Varahramyan, Kamran M.

AU - Shahrjerdi, Davood

AU - Banerjee, Sanjay K.

AU - Tutuc, Emanuel

N1 - Funding Information: Manuscript received July 28, 2009; revised November 16, 2009. First published December 15, 2009; current version published January 22, 2010. This work was supported by the Defense Advanced Research Projects Agency under Contracts HR0011-08-1-0050 and N66001-07-12013. The review of this paper was arranged by Editor H. S. Momose.

PY - 2010/2

Y1 - 2010/2

N2 - We demonstrate the fabrication of high-performance Ge-SixGe 1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.

AB - We demonstrate the fabrication of high-performance Ge-SixGe 1-x coreshell nanowire (NW) field-effect transistors with highly doped source (S) and drain (D) and systematically investigate their scaling properties. Highly doped S and D regions are realized by low-energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the NW resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and on/off current ratio.

KW - Core-shell

KW - Field-effect transistor (FET)

KW - Nanowire (NW)

KW - Silicon-germanium

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