Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

D. Shahrjerdi, T. Akyol, M. Ramon, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, we report fabrication of self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor (MOS) field-effect transistors with atomic layer deposition of Al2O3 gate dielectric directly on GaAs substrates using a simple ex situ wet clean of GaAs. Thermal stability of the gate stack was examined by monitoring the frequency dispersion behavior of GaAs MOS capacitors under different annealing conditions. A maximum drive current of ∼4.5 μAμm was obtained for a gate length of 20 μm at a gate overdrive of 2.5 V. The threshold voltage and subthreshold slope were determined to be ∼0.4 V and ∼145 mVdec from the corresponding Id - Vg characteristics.

Original languageEnglish (US)
Article number203505
JournalApplied Physics Letters
Volume92
Issue number20
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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