Self-assembling quantum dot lattices through nucleation site engineering

B. D. Gerardot; G. Subramanian; S. Minvielle; H. Lee; J. A. Johnson; W. V. Schoenfeld; D. Pine; J. S. Speck; P. M. Petroff

doi:10.1016/S0022-0248(02)00849-7

Self-assembling quantum dot lattices through nucleation site engineering

B. D. Gerardot, G. Subramanian, S. Minvielle, H. Lee, J. A. Johnson, W. V. Schoenfeld, D. Pine, J. S. Speck, P. M. Petroff

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots.

Original language	English (US)
Pages (from-to)	647-654
Number of pages	8
Journal	Journal of Crystal Growth
Volume	236
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(02)00849-7
State	Published - Mar 2002

Keywords

A1. Nanostructures
A1. Nucleation
A3. Molecular beam epitaxy
A3. Quantum dots
A3. Self-assembly
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)00849-7

Cite this

@article{5564d55cac624367b90c2d514601db37,

title = "Self-assembling quantum dot lattices through nucleation site engineering",

abstract = "The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots.",

keywords = "A1. Nanostructures, A1. Nucleation, A3. Molecular beam epitaxy, A3. Quantum dots, A3. Self-assembly, B2. Semiconducting III-V materials",

author = "Gerardot, {B. D.} and G. Subramanian and S. Minvielle and H. Lee and Johnson, {J. A.} and Schoenfeld, {W. V.} and D. Pine and Speck, {J. S.} and Petroff, {P. M.}",

note = "Funding Information: This research was supported by the following grants: ARO (Grant No. DAAD19-99-1-0372), AFOSR (Grant No. F49620-98-1-0367), ARO/MURI (Grant No. DAAG55-98-1-0366), and MRSEC (Grant No. DMR-9632716).",

year = "2002",

month = mar,

doi = "10.1016/S0022-0248(02)00849-7",

language = "English (US)",

volume = "236",

pages = "647--654",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Self-assembling quantum dot lattices through nucleation site engineering

AU - Gerardot, B. D.

AU - Subramanian, G.

AU - Minvielle, S.

AU - Lee, H.

AU - Johnson, J. A.

AU - Schoenfeld, W. V.

AU - Pine, D.

AU - Speck, J. S.

AU - Petroff, P. M.

N1 - Funding Information: This research was supported by the following grants: ARO (Grant No. DAAD19-99-1-0372), AFOSR (Grant No. F49620-98-1-0367), ARO/MURI (Grant No. DAAG55-98-1-0366), and MRSEC (Grant No. DMR-9632716).

PY - 2002/3

Y1 - 2002/3

N2 - The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots.

AB - The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots.

KW - A1. Nanostructures

KW - A1. Nucleation

KW - A3. Molecular beam epitaxy

KW - A3. Quantum dots

KW - A3. Self-assembly

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=0036494093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036494093&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)00849-7

DO - 10.1016/S0022-0248(02)00849-7

M3 - Article

AN - SCOPUS:0036494093

SN - 0022-0248

VL - 236

SP - 647

EP - 654

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Self-assembling quantum dot lattices through nucleation site engineering

Abstract

Keywords

ASJC Scopus subject areas

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