Self-assembling quantum dot lattices through nucleation site engineering

B. D. Gerardot, G. Subramanian, S. Minvielle, H. Lee, J. A. Johnson, W. V. Schoenfeld, D. Pine, J. S. Speck, P. M. Petroff

Research output: Contribution to journalArticle

Abstract

The long range ordering of epitaxial semiconductor quantum dots is investigated using several crystal growth techniques on prepatterned substrates. We have developed two nucleation site control techniques: one which uses localized surface chemical potential engineering and one which uses localized surface strain engineering. We present experimental results that demonstrate the ability to create ordered quantum dot lattices and discuss the different mechanisms involved in the long range ordering of quantum dots.

Original languageEnglish (US)
Pages (from-to)647-654
Number of pages8
JournalJournal of Crystal Growth
Volume236
Issue number4
DOIs
StatePublished - Mar 2002

Keywords

  • A1. Nanostructures
  • A1. Nucleation
  • A3. Molecular beam epitaxy
  • A3. Quantum dots
  • A3. Self-assembly
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Gerardot, B. D., Subramanian, G., Minvielle, S., Lee, H., Johnson, J. A., Schoenfeld, W. V., Pine, D., Speck, J. S., & Petroff, P. M. (2002). Self-assembling quantum dot lattices through nucleation site engineering. Journal of Crystal Growth, 236(4), 647-654. https://doi.org/10.1016/S0022-0248(02)00849-7