Short-term relaxation in HfOx/CeOx Resistive Random Access Memory with Selector

Cheng Chih Hsieh, Yao Feng Chang, Yoocharn Jeon, Anupam Roy, Davood Shahrjerdi, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review


This letter illustrates short-term relaxation in CeOx-based resistive random access memory (RRAM) devices. Our results suggest that the noise of the serial selector device can impact the short-term relaxation, reduce the operating window of the RRAM, and increase the read error. Our findings indicate that the application of longer initial forming pulses can mitigate the short-term relaxation issue.

Original languageEnglish (US)
Article number7937878
Pages (from-to)871-874
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
StatePublished - Jul 2017


  • RRAM
  • high-κ dielectrics
  • programming algorithms
  • reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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