@article{24e9fc882d60422dab1ae84c002772eb,
title = "Short-term relaxation in HfOx/CeOx Resistive Random Access Memory with Selector",
abstract = "This letter illustrates short-term relaxation in CeOx-based resistive random access memory (RRAM) devices. Our results suggest that the noise of the serial selector device can impact the short-term relaxation, reduce the operating window of the RRAM, and increase the read error. Our findings indicate that the application of longer initial forming pulses can mitigate the short-term relaxation issue.",
keywords = "RRAM, high-κ dielectrics, programming algorithms, reliability",
author = "Hsieh, {Cheng Chih} and Chang, {Yao Feng} and Yoocharn Jeon and Anupam Roy and Davood Shahrjerdi and Banerjee, {Sanjay K.}",
note = "Funding Information: Manuscript received May 20, 2017; accepted May 30, 2017. Date of publication June 1, 2017; date of current version June 23, 2017. This work was supported in part by the SouthWest Academy of Nanotechnologies and in part by the National Nanotechnology Coordinated Infrastructure. The review of this letter was arranged by Editor B. Govoreanu. (Corresponding author: Cheng-Chih Hsieh.) C.-C. Hsieh, Y.-F. Chang, A. Roy, and S. K. Banerjee are with The University of Texas at Austin, Austin, TX 78758 USA (e-mail:
[email protected]). Publisher Copyright: {\textcopyright} 2017 IEEE.",
year = "2017",
month = jul,
doi = "10.1109/LED.2017.2710955",
language = "English (US)",
volume = "38",
pages = "871--874",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}