This letter illustrates short-term relaxation in CeOx-based resistive random access memory (RRAM) devices. Our results suggest that the noise of the serial selector device can impact the short-term relaxation, reduce the operating window of the RRAM, and increase the read error. Our findings indicate that the application of longer initial forming pulses can mitigate the short-term relaxation issue.
- high-κ dielectrics
- programming algorithms
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering