Simulation of phosphorus implantation into silicon with a single parameter electronic stopping power model

David Cai, Charles M. Snell, Keith M. Beardmore, Niels Grønbech-Jensen

Research output: Contribution to journalArticle

Abstract

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z*1, and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius r0s which controls Z*1. By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.

Original languageEnglish (US)
Pages (from-to)459-470
Number of pages12
JournalInternational Journal of Modern Physics C
Volume9
Issue number3
DOIs
StatePublished - May 1998

Keywords

  • Binary Collision
  • Electronic Stopping
  • Modeling Ion Implantation
  • Molecular Dynamics
  • Silicon

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Mathematical Physics
  • Physics and Astronomy(all)
  • Computer Science Applications
  • Computational Theory and Mathematics

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