Abstract
Magnetically soft/hard exchange-coupled layered structures with modulated exchange coupling were deposited by sputtering on Si (100) substrates. The interfacial exchange coupling strength between the soft and hard layers was tailored by inserting a thin nonmagnetic insulating Si3N4 layer. Results showed that the reduction in the exchange coupling reduces the nucleation field of the soft layer and increases the irreversible switching field of the hard layer.
Original language | English (US) |
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Pages (from-to) | 4535-4538 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 7 |
DOIs | |
State | Published - Oct 1 2003 |
ASJC Scopus subject areas
- General Physics and Astronomy