Spectroscopic identification of light emitted from defects in silicon devices

Mahmoud S. Rasras; Ingrid De Wolf; Guido Groeseneken; Herman E. Maes

doi:10.1063/1.1322595

Spectroscopic identification of light emitted from defects in silicon devices

Mahmoud S. Rasras, Ingrid De Wolf, Guido Groeseneken, Herman E. Maes

Research output: Contribution to journal › Article › peer-review

Abstract

A comprehensive study of different fundamental aspects of light emission from defects in Si semiconductor devices is presented. Based on an experimental analysis, using a new highly sensitive spectroscopic photon emission microscope (SPEM) for continuous wavelength analysis (2.5 eV-1.2 eV), a unique assignment of the spectrum of the emitted light and the corresponding failure mechanism is established. Three distinguishable basic spectral categories were identified. They were attributed to gate oxide breakdown, metal shorts, and electro-static discharge caused junction spiking. The focused ion beam technique was used to look at the damage sites for confirmation of the SPEM results.

Original language	English (US)
Pages (from-to)	249-258
Number of pages	10
Journal	Journal of Applied Physics
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.1322595
State	Published - Jan 1 2001

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1322595

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abstract = "A comprehensive study of different fundamental aspects of light emission from defects in Si semiconductor devices is presented. Based on an experimental analysis, using a new highly sensitive spectroscopic photon emission microscope (SPEM) for continuous wavelength analysis (2.5 eV-1.2 eV), a unique assignment of the spectrum of the emitted light and the corresponding failure mechanism is established. Three distinguishable basic spectral categories were identified. They were attributed to gate oxide breakdown, metal shorts, and electro-static discharge caused junction spiking. The focused ion beam technique was used to look at the damage sites for confirmation of the SPEM results.",

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AB - A comprehensive study of different fundamental aspects of light emission from defects in Si semiconductor devices is presented. Based on an experimental analysis, using a new highly sensitive spectroscopic photon emission microscope (SPEM) for continuous wavelength analysis (2.5 eV-1.2 eV), a unique assignment of the spectrum of the emitted light and the corresponding failure mechanism is established. Three distinguishable basic spectral categories were identified. They were attributed to gate oxide breakdown, metal shorts, and electro-static discharge caused junction spiking. The focused ion beam technique was used to look at the damage sites for confirmation of the SPEM results.

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Spectroscopic identification of light emitted from defects in silicon devices

Abstract

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