Abstract
Photon emission microscopy (PEM) is a technique used commonly for failure analysis of microelectronics chips. This technique has it limitations: it can only be used to indicate the place of the failure. In most cases, this is not enough to allow a definition of the failure, i.e. to find out whether it is due to a gate oxide breakdown, a metal short, a junction spiking, etc. In this paper spectral PEM is discussed. It is shown that the spectrum of the light emitted by the failure may offer valuable information about the identity of the failure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1161-1169 |
| Number of pages | 9 |
| Journal | Microelectronics Reliability |
| Volume | 41 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering