Spin-torque switchable perpendicular magnetic junctions for solid-state memory

J. Z. Sun, R. P. Robertazzi, J. J. Nowak, P. L. Trouilloud, G. Hu, M. C. Gaidis, S. L. Brown, D. W. Abraham, E. J. O'Sullivan, W. J. Gallagher, D. C. Worledge, A. D. Kent

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.

    Original languageEnglish (US)
    Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
    Pages171-174
    Number of pages4
    DOIs
    StatePublished - 2011
    Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
    Duration: Jun 20 2011Jun 22 2011

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770

    Other

    Other69th Device Research Conference, DRC 2011
    CountryUnited States
    CitySanta Barbara, CA
    Period6/20/116/22/11

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Sun, J. Z., Robertazzi, R. P., Nowak, J. J., Trouilloud, P. L., Hu, G., Gaidis, M. C., Brown, S. L., Abraham, D. W., O'Sullivan, E. J., Gallagher, W. J., Worledge, D. C., & Kent, A. D. (2011). Spin-torque switchable perpendicular magnetic junctions for solid-state memory. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 171-174). [5994475] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994475