Spin-torque switchable perpendicular magnetic junctions for solid-state memory

J. Z. Sun; R. P. Robertazzi; J. J. Nowak; P. L. Trouilloud; G. Hu; M. C. Gaidis; S. L. Brown; D. W. Abraham; E. J. O'Sullivan; W. J. Gallagher; D. C. Worledge; A. D. Kent

doi:10.1109/DRC.2011.5994475

Spin-torque switchable perpendicular magnetic junctions for solid-state memory

J. Z. Sun, R. P. Robertazzi, J. J. Nowak, P. L. Trouilloud, G. Hu, M. C. Gaidis, S. L. Brown, D. W. Abraham, E. J. O'Sullivan, W. J. Gallagher, D. C. Worledge, A. D. Kent

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	171-174
Number of pages	4
DOIs	https://doi.org/10.1109/DRC.2011.5994475
State	Published - 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/DRC.2011.5994475

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Sun, J. Z., Robertazzi, R. P., Nowak, J. J., Trouilloud, P. L., Hu, G., Gaidis, M. C., Brown, S. L., Abraham, D. W., O'Sullivan, E. J., Gallagher, W. J., Worledge, D. C., & Kent, A. D. (2011). Spin-torque switchable perpendicular magnetic junctions for solid-state memory. In 69th Device Research Conference, DRC 2011 - Conference Digest (pp. 171-174). Article 5994475 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2011.5994475

Sun, JZ, Robertazzi, RP, Nowak, JJ, Trouilloud, PL, Hu, G, Gaidis, MC, Brown, SL, Abraham, DW, O'Sullivan, EJ, Gallagher, WJ, Worledge, DC & Kent, AD 2011, Spin-torque switchable perpendicular magnetic junctions for solid-state memory. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994475, Device Research Conference - Conference Digest, DRC, pp. 171-174, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994475

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title = "Spin-torque switchable perpendicular magnetic junctions for solid-state memory",

abstract = "PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.",

author = "Sun, {J. Z.} and Robertazzi, {R. P.} and Nowak, {J. J.} and Trouilloud, {P. L.} and G. Hu and Gaidis, {M. C.} and Brown, {S. L.} and Abraham, {D. W.} and O'Sullivan, {E. J.} and Gallagher, {W. J.} and Worledge, {D. C.} and Kent, {A. D.}",

year = "2011",

doi = "10.1109/DRC.2011.5994475",

language = "English (US)",

isbn = "9781612842417",

series = "Device Research Conference - Conference Digest, DRC",

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note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

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AU - Sun, J. Z.

AU - Robertazzi, R. P.

AU - Nowak, J. J.

AU - Trouilloud, P. L.

AU - Hu, G.

AU - Gaidis, M. C.

AU - Brown, S. L.

AU - Abraham, D. W.

AU - O'Sullivan, E. J.

AU - Gallagher, W. J.

AU - Worledge, D. C.

AU - Kent, A. D.

PY - 2011

Y1 - 2011

N2 - PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.

AB - PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.

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DO - 10.1109/DRC.2011.5994475

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SN - 9781612842417

T3 - Device Research Conference - Conference Digest, DRC

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EP - 174

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

T2 - 69th Device Research Conference, DRC 2011

Y2 - 20 June 2011 through 22 June 2011

ER -

Spin-torque switchable perpendicular magnetic junctions for solid-state memory

Abstract

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