Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

L. Ye; D. B. Gopman; L. Rehm; D. Backes; G. Wolf; T. Ohki; A. F. Kirichenko; I. V. Vernik; O. A. Mukhanov; A. D. Kent

doi:10.1063/1.4865464

Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

L. Ye, D. B. Gopman, L. Rehm, D. Backes, G. Wolf, T. Ohki, A. F. Kirichenko, I. V. Vernik, O. A. Mukhanov, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

Original language	English (US)
Article number	17C725
Journal	Journal of Applied Physics
Volume	115
Issue number	17
DOIs	https://doi.org/10.1063/1.4865464
State	Published - May 7 2014

ASJC Scopus subject areas

General Physics and Astronomy

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abstract = "We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.",

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T1 - Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

AU - Ye, L.

AU - Gopman, D. B.

AU - Rehm, L.

AU - Backes, D.

AU - Wolf, G.

AU - Ohki, T.

AU - Kirichenko, A. F.

AU - Vernik, I. V.

AU - Mukhanov, O. A.

AU - Kent, A. D.

PY - 2014/5/7

Y1 - 2014/5/7

N2 - We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

AB - We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

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Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

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