Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

L. Ye, D. B. Gopman, L. Rehm, D. Backes, G. Wolf, T. Ohki, A. F. Kirichenko, I. V. Vernik, O. A. Mukhanov, A. D. Kent

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

    Original languageEnglish (US)
    Article number17C725
    JournalJournal of Applied Physics
    Volume115
    Issue number17
    DOIs
    StatePublished - May 7 2014

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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