Stability phase diagrams and tuning of magnetic skyrmionium and other states

Nasir Mehmood, Rehman Fazal, Wang Yadong, Tian Guo, Qiang Zhang, Zhipeng Hou, Gao Xingsen, Jun Ming Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Topological magnetic states such as skyrmions have widely been investigated as a suitable candidate for memory bits in next generation data storage device applications including random access memory (RAM) or race-track memory as well as spin-torque nano-oscillators etc. Energy efficient multistate switching of these states based on electric control of magnetization involves the electric field tuning of perpendicular magnetic anisotropy (PMA). By using micromagnetic simulation study, we demonstrate the strain-mediated electric manipulation of various topological magnetic states in nanodisc with [Pt/Co/Ta]n trilayer stacks residing on a piezoelectric substrate. A stability phase diagram is derived for the representation of regions of the lowest energy states against the applied strain as a function of disc dimensions. Utilizing this derived phase diagram, various electric field-induced strain-mediated switching scenarios including non-volatile reversible switching of skyrmion into skyrmionium, 3π state and helical stripe domain state, the creation of skyrmionium from uniform single-domain magnetic state and its annihilation and volatile reversible switching between skyrmionium and vortex are achieved. Moreover, an extended phase diagram based on the estimated critical values of the applied strain for different domain structures within the nanodisc is also built and further implemented in designing a multistate sequential switching between various magnetic states triggered by a continuously varying strain pulse. These findings hold a potential for contributing in the development of low-power high-density multistate magneto-electric or magneto-elastic memory and logic device applications involving simple architectural concept applicable to future microelectronic integrated device strategies.

Original languageEnglish (US)
Article number167706
JournalJournal of Magnetism and Magnetic Materials
Volume526
DOIs
StatePublished - May 15 2021

Keywords

  • Electric-driven magnetic switching
  • High-density memory
  • Skyrmion
  • Skyrmionium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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