State diagram of an orthogonal spin transfer spin valve device

Li Ye, Georg Wolf, Daniele Pinna, Gabriel D. Chaves-O'Flynn, Andrew D. Kent

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    Abstract

    We present the switching characteristics of a spin-transfer device that incorporates a perpendicularly magnetized spin-polarizing layer with an in-plane magnetized free and fixed magnetic layer, known as an orthogonal spin transfer spin valve device. This device shows clear switching between parallel (P) and antiparallel (AP) resistance states and the reverse transition (AP→P) for both current polarities. Further, hysteretic transitions are shown to occur into a state with a resistance intermediate between that of the P and AP states, again for both current polarities. These unusual spin-transfer switching characteristics can be explained within a simple macrospin model that incorporates thermal fluctuations and considers a spin-polarized current that is tilted with respect to the free layer's plane, due to the presence of the spin-transfer torque from the polarizing layer.

    Original languageEnglish (US)
    Article number193902
    JournalJournal of Applied Physics
    Volume117
    Issue number19
    DOIs
    StatePublished - May 21 2015

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Ye, L., Wolf, G., Pinna, D., Chaves-O'Flynn, G. D., & Kent, A. D. (2015). State diagram of an orthogonal spin transfer spin valve device. Journal of Applied Physics, 117(19), [193902]. https://doi.org/10.1063/1.4920991