TY - GEN
T1 - STIFF
T2 - 19th ACM International Conference on Computing Frontiers, CF 2022
AU - Chakraborty, Shounak
AU - Soteriou, Vassos
AU - Själander, Magnus
N1 - Publisher Copyright:
© 2022 ACM.
PY - 2022/5/17
Y1 - 2022/5/17
N2 - FinFET, a non-planar device, has become the prevalent choice for chip-multiprocessor (CMP) designs due to its lower leakage and improved scalability as compared to planar CMOS devices. FinFETs are fundamentally different from conventional CMOS circuits in terms of circuit-delay vs. temperature, i.e., circuit-delay decreases in FinFET at higher temperature even in the super threshold supply-voltage regime. Such characteristic of FinFET is known as temperature effect inversion (TEI). But, a drastic increase in channel temperature may lead to an increase in leakage consumption and may accelerate the circuit aging process due to the self-heating effect (SHE). This paper introduces STIFF, which balances the upsides of TEI against the potential hazardous SHE in a FinFET based CMP. Basically, STIFF exploits online performance statistics to determine the thermal intensity of cores and local caches, and scales the supply-voltage prudentially to maintain a stable core-frequency and local-cache performance on-the-fly by exploiting TEI, while reducing the SHE. Our simulation results show that, STIFF is able to maintain a stable frequency of 3.7GHz of the cores with a small standard deviation of 0.23, while maintaining a safe temperature during execution, and it outperforms a state-of-the-art DVFS technique for the FinFET based cores. STIFF also maintains a stable access time at the local L1 caches, while ensuring thermal safety by introducing a cache access cognizant scaling of the supply voltage of the individual L1 cache-banks without any noticeable performance-loss.
AB - FinFET, a non-planar device, has become the prevalent choice for chip-multiprocessor (CMP) designs due to its lower leakage and improved scalability as compared to planar CMOS devices. FinFETs are fundamentally different from conventional CMOS circuits in terms of circuit-delay vs. temperature, i.e., circuit-delay decreases in FinFET at higher temperature even in the super threshold supply-voltage regime. Such characteristic of FinFET is known as temperature effect inversion (TEI). But, a drastic increase in channel temperature may lead to an increase in leakage consumption and may accelerate the circuit aging process due to the self-heating effect (SHE). This paper introduces STIFF, which balances the upsides of TEI against the potential hazardous SHE in a FinFET based CMP. Basically, STIFF exploits online performance statistics to determine the thermal intensity of cores and local caches, and scales the supply-voltage prudentially to maintain a stable core-frequency and local-cache performance on-the-fly by exploiting TEI, while reducing the SHE. Our simulation results show that, STIFF is able to maintain a stable frequency of 3.7GHz of the cores with a small standard deviation of 0.23, while maintaining a safe temperature during execution, and it outperforms a state-of-the-art DVFS technique for the FinFET based cores. STIFF also maintains a stable access time at the local L1 caches, while ensuring thermal safety by introducing a cache access cognizant scaling of the supply voltage of the individual L1 cache-banks without any noticeable performance-loss.
KW - CMP
KW - FinFET
KW - SHE
KW - TEI
KW - thermal management
UR - http://www.scopus.com/inward/record.url?scp=85130692448&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85130692448&partnerID=8YFLogxK
U2 - 10.1145/3528416.3530223
DO - 10.1145/3528416.3530223
M3 - Conference contribution
AN - SCOPUS:85130692448
T3 - ACM International Conference Proceeding Series
SP - 21
EP - 29
BT - Proceedings of the 19th ACM International Conference on Computing Frontiers 2022, CF 2022
PB - Association for Computing Machinery
Y2 - 17 May 2022 through 19 May 2022
ER -