Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

A. Khakifirooz, K. Cheng, T. Nagumo, N. Loubet, T. Adam, A. Reznicek, J. Kuss, D. Shahrjerdi, R. Sreenivasan, S. Ponoth, H. He, P. Kulkarni, Q. Liu, P. Hashemi, P. Khare, S. Luning, S. Mehta, J. Gimbert, Y. Zhu, Z. ZhuJ. Li, A. Madan, T. Levin, F. Monsieur, T. Yamamoto, S. Naczas, S. Schmitz, S. Holmes, C. Aulnette, N. Daval, W. Schwarzenbach, B. Y. Nguyen, V. Paruchuri, M. Khare, G. Shahidi, B. Doris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/μm and 1.25mA/μm, and I eff of 0.95mA/μm and 0.70mA/μm at I off =100nA/μm and V DD of 1V, for NFET and PFET, respectively.

Original languageEnglish (US)
Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages117-118
Number of pages2
DOIs
StatePublished - 2012
Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
Duration: Jun 12 2012Jun 14 2012

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2012 Symposium on VLSI Technology, VLSIT 2012
CountryUnited States
CityHonolulu, HI
Period6/12/126/14/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Khakifirooz, A., Cheng, K., Nagumo, T., Loubet, N., Adam, T., Reznicek, A., Kuss, J., Shahrjerdi, D., Sreenivasan, R., Ponoth, S., He, H., Kulkarni, P., Liu, Q., Hashemi, P., Khare, P., Luning, S., Mehta, S., Gimbert, J., Zhu, Y., ... Doris, B. (2012). Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 117-118). [6242489] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242489