Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticles

Engineering

• Room Temperature 100%
• Gold Nanoparticle 100%
• Tensiles 100%
• Nanoscale 50%
• Light Source 50%
• Primary Goal 50%
• Plasmonics 50%
• Electrical Performance 50%
• Gaas Substrate 50%
• Band Structure 50%
• Field Enhancement 50%
• Engineering Strain 50%
• Tensile Strain 50%
• Optoelectronics 50%
• Silicon Technology 50%
• Mechanical Strain 50%
• Energy Band 50%
• Optical Path Length 50%
• Light Absorption 50%
• Optoelectronic Device 50%

Material Science

• Gold Nanoparticle 100%
• Photoluminescence 100%
• Germanium 50%
• Nanoindentation 50%
• Silicon 25%
• Optical Property 25%
• Gallium Arsenide 25%
• Electronic Band Structure 25%
• Tensile Strain 25%

Keyphrases

• On-chip Light Sources 25%
• Carrier Transportation 25%
• Long Optical Path 25%
• Schottky Interface 25%
• Biaxial Tensile Strain 25%
• Mask-free 25%
• Integrated Laser 25%