Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition

Seongho Jeong; Eray S. Aydil

doi:10.1116/1.3491036

Structural and electrical properties of Cu₂O thin films deposited on ZnO by metal organic chemical vapor deposition

Seongho Jeong, Eray S. Aydil

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Cu₂O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C₅ HF₆O₂) ₂], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu₂O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu₂O thin films grow on ZnO with preferred (220) Cu₂O (0002) ZnO orientation. The grain size and stress in Cu₂O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu₂O films with hole mobilities exceeding 30 cm²/V s are obtained at a deposition temperature of 400 °C.

Original language	English (US)
Pages (from-to)	1338-1343
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	28
Issue number	6
DOIs	https://doi.org/10.1116/1.3491036
State	Published - Nov 2010

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Structural and electrical properties of Cu2O thin films deposited on ZnO by metal organic chemical vapor deposition",

abstract = "Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.",

author = "Seongho Jeong and Aydil, {Eray S.}",

note = "Funding Information: This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0819885. Parts of this work were carried out in the University of Minnesota Characterization Facility, which has received capital equipment funding from the NSF through the MRSEC, ERC, and MRI programs and in the Nanofabrication Center, which receives partial support from NSF through the NNIN program. S.J. was supported by a Samsung Fellowship.",

year = "2010",

month = nov,

doi = "10.1116/1.3491036",

language = "English (US)",

volume = "28",

pages = "1338--1343",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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AU - Jeong, Seongho

AU - Aydil, Eray S.

N1 - Funding Information: This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0819885. Parts of this work were carried out in the University of Minnesota Characterization Facility, which has received capital equipment funding from the NSF through the MRSEC, ERC, and MRI programs and in the Nanofabrication Center, which receives partial support from NSF through the NNIN program. S.J. was supported by a Samsung Fellowship.

PY - 2010/11

Y1 - 2010/11

N2 - Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.

AB - Cu2O thin films were deposited on ZnO coated glass substrates by metal organic chemical vapor deposition from copper(II) hexafluoroacetylacetonate [Cu (C5 HF6O2) 2], oxygen gas, and water vapor. The dependence of the structural and electrical properties of Cu2O films on deposition temperature and film thickness was investigated. X-ray diffraction showed that Cu2O thin films grow on ZnO with preferred (220) Cu2O (0002) ZnO orientation. The grain size and stress in Cu2O films increase with increasing substrate temperature but decrease with increasing film thickness. The carrier mobility increases with increasing grain size indicating that the carrier transport is limited by scattering from the grain boundaries. Single-phase epitaxial p -type Cu2O films with hole mobilities exceeding 30 cm2/V s are obtained at a deposition temperature of 400 °C.

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Structural and electrical properties of Cu₂O thin films deposited on ZnO by metal organic chemical vapor deposition

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